Reviews & Analysis

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  • Field-effect transistors based on heterojunctions of hydrogen-terminated diamond and hexagonal boron nitride can offer surface carrier mobilities as high as 680 cm2 V–1 s–1.

    • Moshe Tordjman
    News & Views
  • By incorporating oxygen into the chemical vapour deposition growth of molybdenum disulfide, sulfur vacancies can be passivated and contact resistances lowered.

    • Saptarshi Das
    • Ana Laura Elías
    News & Views
  • Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.

    • Yury Yu. Illarionov
    • Theresia Knobloch
    • Tibor Grasser
    News & Views
  • This Review examines the scaling prospects of quantum computing systems based on silicon spin technology and how the different layers of such a computer could benefit from using complementary metal–oxide–semiconductor (CMOS) technology.

    • M. F. Gonzalez-Zalba
    • S. de Franceschi
    • A. S. Dzurak
    Review Article
  • A monolithic three-dimensional integrated system based on CMOS logic, compute-in-memory and associative memory can be used to efficiently implement one-shot learning.

    • Zijian Zhao
    • Shan Deng
    • Kai Ni
    News & Views
  • Printed thin-film transistors and circuits fabricated on plastic strips can be wrapped around fibres to create stretchable electronics.

    • Simone Fabiano
    • Antonio Facchetti
    News & Views
  • Monolayer transition metal dichalcogenide transistors can be fabricated on 300 mm wafers using an approach that is compatible with back-end-of-line process temperatures.

    • Du Xiang
    • Tao Liu
    News & Views
  • This Review examines the development of field-effect transistors based on two-dimensional materials and considers the challenges that need to be addressed for the devices to be incorporated into very large-scale integration (VLSI) technology.

    • Saptarshi Das
    • Amritanand Sebastian
    • Rajendra Singh
    Review Article
  • This Perspective examines the development of integrated circuits based on layered two-dimensional materials, exploring where they are likely to first find commercial use and considers the challenges than need to be addressed to create highly scaled circuits.

    • Kaichen Zhu
    • Chao Wen
    • Mario Lanza
  • Textile-integrated metamaterials can be used to propagate signals across the body, and between different people, allowing a network of sensors to be connected and powered.

    • Rongzhou Lin
    • John S. Ho
    News & Views
  • A thin and rollable high-resolution image sensor can be created by placing solution-processed metal halide perovskite photodiodes over an amorphous indium gallium zinc oxide transistor backplane.

    • Ya Wang
    • Hang Zhou
    News & Views
  • This Review examines the development of novel physical effects and materials for wireless power transfer, considering techniques based on coherent perfect absorption, parity–time symmetry and exceptional points, and on-site power generation, as well as the use of metamaterials and metasurfaces, and acoustic power transfer.

    • Mingzhao Song
    • Prasad Jayathurathnage
    • Alex Krasnok
    Review Article
  • Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.

    • Ruixiang Fei
    • Li Yang
    News & Views
  • Large-area electronics based on metal-oxide thin-film transistors can be used to create integrated phased arrays for radiofrequency front-ends in 5G — and future 6G — communication systems.

    • George A. Kyriacou
    News & Views
  • This Perspective explores the potential of an approach to neuromorphic electronics in which the functional synaptic connectivity map of a mammalian neuronal network is copied using a silicon neuro-electronic interface and then pasted onto a high-density three-dimensional network of solid-state memories.

    • Donhee Ham
    • Hongkun Park
    • Kinam Kim
  • This Review examines the development of emerging semiconductor materials—organic semiconductors, colloidal quantum dots and metal halide perovskites—for light-emitting diodes, considering efforts to improve modulation performance and device efficiency, as well as potential applications in on-chip interconnects and light fidelity (Li-Fi).

    • Aobo Ren
    • Hao Wang
    • Ian H. White
    Review Article
  • This Review examines the use of colloidal quantum dots in the development of next-generation electronics, including luminescent, optoelectronic, memory and thermoelectric devices.

    • Mengxia Liu
    • Nuri Yazdani
    • Edward H. Sargent
    Review Article
  • Vertical organic thin-film transistors can be used to create complementary circuits that operate at high frequencies.

    • Wei Huang
    • Antonio Facchetti
    News & Views