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Room-temperature ferroelectric switching

Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.

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Fig. 1: Spin-texture switching of ferroelectric Rashba semiconductors.


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Correspondence to Li Yang.

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Fei, R., Yang, L. Room-temperature ferroelectric switching. Nat Electron 4, 703–704 (2021).

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