Extended Data Fig. 5: Absence of in-plane magnetic field dependence. | Nature

Extended Data Fig. 5: Absence of in-plane magnetic field dependence.

From: Continuous Mott transition in semiconductor moiré superlattices

Extended Data Fig. 5

Square resistance as a function of bottom gate voltage at varying in-plane magnetic fields. The bottom gate voltage primarily changes the filling factor \(f\). The electric field is fixed at 3.5 mV nm–1 (from \({E}_{{\rm{c}}}\)) near f = 1. No in-plane magnetic field dependence is observed due to the strong Ising spin–orbit coupling in monolayer TMDs

Source data.

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