Extended Data Fig. 3: Extraction of activation gap at f = 1 and Landau Fermi liquid behaviour at low temperatures. | Nature

Extended Data Fig. 3: Extraction of activation gap at f = 1 and Landau Fermi liquid behaviour at low temperatures.

From: Continuous Mott transition in semiconductor moiré superlattices

Extended Data Fig. 3

a, Temperature dependence of the square resistance (symbols) at varying electric fields in an Arrhenius plot. Thermal activation behaviour (dashed lines) is observed at high temperatures, from which the activation gaps are extracted. b, Square resistance (symbols) as a function of temperature squared at varying electric fields. The dashed lines are fits at low temperatures to \({R}_{{\rm{\square }}}={R}_{0}+A{T}^{2}\) with fitting parameter \({R}_{0}\) denoting the residual resistance and slope \(A\propto {(m* )}^{2}\). The slope increases substantially near the critical electric field. The deviation from the Landau Fermi liquid behaviour at low temperatures very close to the critical point \(|E-{E}_{{\rm{c}}}| < 1\) mV nm–1 is likely to be caused by sample disorders. Typical error bars for the applied electric field are ± 0.2 mV nm–1.

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