Extended Data Fig. 10: Quantum oscillations in the insulating states. | Nature

Extended Data Fig. 10: Quantum oscillations in the insulating states.

From: Continuous Mott transition in semiconductor moiré superlattices

Extended Data Fig. 10

a, Square resistance as a function of bottom gate voltage at 300 mK. The f = 2 insulating state is labeled. b, Magnetoresistance under a perpendicular magnetic field at selected bottom gate voltages marked by the arrows in a. Quantum oscillations due to the nearby graphite gate are observed near the insulating state. The oscillations disappear away from the f = 2 insulating state. c, Two-terminal magnetoresistance at the f = 2 insulating state with a graphite gate about 5 nm separated from the sample. d, The same as in c except the graphite gate is replaced by a few-layer metallic TaSe2 gate that is ~3 nm away from the sample. No quantum oscillations are developed in both the TaSe2 gate and in the sample under magnetic fields up to 9 T. The results verify that the quantum oscillations are originated from the high mobility graphite gate.

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