Extended Data Fig. 8: Major results for device 2. | Nature

Extended Data Fig. 8: Major results for device 2.

From: Continuous Mott transition in semiconductor moiré superlattices

Extended Data Fig. 8

a, Temperature dependence of the longitudinal resistance at f = 1 under varying electric fields. The critical electric field is near \({E}_{{\rm{C}}}\) = 0.63 V nm–1. A MIT similar to that in device 1 is observed. b, Longitudinal resistance at 1.6 K in logarithmic scale as a function of top and bottom gate voltages. The gate voltages relate to the hole filling factor f and the applied electric field E. Electric-field-induced MIT is observed at f = 1 and 2. Compared to device 1, there is a higher degree of spatial inhomogeneity in device 2, which prevents reliable scaling analysis near the critical point

Source data.

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