Extended Data Fig. 7: Spatial homogeneity of device 1. | Nature

Extended Data Fig. 7: Spatial homogeneity of device 1.

From: Continuous Mott transition in semiconductor moiré superlattices

Extended Data Fig. 7

Two-point current as a function of bottom gate voltage at fixed top gate voltage. The excitation bias voltage is 2 mV. The insulating states at f = 1 and f = 2 are seen at different source–drain pairs corresponding to the optical image in Fig. 1b. The slight shift of the insulating states in gate voltage manifests sample inhomogeneity. The two-point resistance also varies from pair to pair, reflecting the variation in contact/sample resistance

Source data.

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