Extended Data Fig. 6: Pomeranchuk effect at f = 1. | Nature

Extended Data Fig. 6: Pomeranchuk effect at f = 1.

From: Continuous Mott transition in semiconductor moiré superlattices

Extended Data Fig. 6

a, Temperature dependence of square resistance at f = 1 and near 3.5 mV nm–1 above the critical field. b, Temperature dependence of the inverse magnetic susceptibility under the same condition as a. The susceptibility saturates at low temperatures; it follows the Curie–Weiss dependence (dashed lines) above the crossover from a Fermi liquid to an incoherent metal (denoted by the arrow). c, Square resistance as a function of temperature and bottom gate voltage at a fixed top gate voltage. The bottom gate voltage mainly changes the filling factor. The electric field is fixed at 3.5 mV nm–1 near the f = 1 resistance peak (with deviations < 0.2 mV nm–1, the typical uncertain in applied electric fields). The f = 1 resistance peak is absent below ~7 K (horizontal dashed line), where the \({R}_{{\rm{\square }}}-T\) dependence at f = 1 shows Fermi liquid behaviour (a). Above ~7 K but below \({T}^{\ast }\approx 16\) K, the f = 1 resistance peak emerges and the \({R}_{{\rm{\square }}}-T\) dependence deviates from the Fermi liquid behaviour (but still metallic \(\frac{{\rm{d}}{R}_{{\rm{\square }}}}{{\rm{d}}T} > 0\)). The emergence of the resistance peak and the deviation from the Fermi liquid behaviour are correlated with the emergence of local moments (b), demonstrating the Pomeranchuk effect. Above \({T}^{{\rm{* }}}\approx 16\) K, the f = 1 resistance peak remains but the system displays insulating-like behaviour (\(\frac{{\rm{d}}{R}_{{\rm{\square }}}}{{\rm{d}}T} < 0\)). The result is fully consistent with the results presented in the main text, where the filling factor is kept constant at f = 1

Source data.

Back to article page