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Mutual passivation of electrically active and isovalent impurities

Abstract

The alloy GaNx As1−x (with x typically less than 0.05) is a novel semiconductor that has many interesting electronic properties because of the nitrogen-induced dramatic modifications of the conduction band structure of the host material (GaAs). Here we demonstrate the existence of an entirely new effect in the GaNx As1−x alloy system in which the Si donor in the substitututional Ga site (SiGa) and the isovalent atom N in the As sublattice (NAs) passivate each other's electronic activity. This mutual passivation occurs in Si-doped GaNx As1−x through the formation of nearest-neighbour SiGa –NAs pairs and is thermally stable up to 950 °C. Consequently, Si doping in GaNx As1−x under equilibrium conditions results in a highly resistive GaNx As1−x layer with the fundamental bandgap governed by a net 'active' N, roughly equal to the total N content minus the Si concentration. Such mutual passivation is expected to be a general phenomenon for electrically active dopants and localized state impurities that can form nearest-neighbour pairs.

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Figure 1: Energy gap of GaNx As1−x alloys as a function of N content.
Figure 2: Resistivities and electron concentrations of Si-doped GaAs and GaN0.015 As0.985 thin films.
Figure 3: Bandgap energies.
Figure 4: Photoluminescence spectra from GaN0.015 As0.95 thin films doped with 1.6 × 1019 cm−3 Si atoms.
Figure 5: Photomodulated reflectance spectra from Si-doped and undoped GaNx As1−x samples.

References

  1. Walukiewicz, W. et al. Interaction of localized electronic states with the conduction band: band anticrossing in II–VI semiconductor ternaries. Phys. Rev. Lett. 85, 1552–1555 (2000).

    CAS  Article  Google Scholar 

  2. Yu, K.M. et al. Band anticrossing in group II-Ox–VI1−x highly mismatched alloys: Cd1−y Mny Ox Te1−x quaternaries synthesized by O ion implantation. Appl. Phys. Lett. 80, 1571–1573 (2002).

    CAS  Article  Google Scholar 

  3. Semicond. Sci. Technol. 17 (special issue on III–N-V semiconductor alloys) (2002).

  4. Shan, W. et al. Band anticrossing in GaInNAs alloys. Phys. Rev. Lett. 82, 1221–1224 (1999).

    CAS  Article  Google Scholar 

  5. Uesugi, K. et al. Reexamination of N composition dependence of coherently grown GaNAs bandgap energy with high-resolution x-ray diffraction mapping measurement. Appl. Phys. Lett. 74, 1254–1256 (1999).

    CAS  Article  Google Scholar 

  6. Keyes, B.M. et al. Optical investigation of GaNAs, NCPV photovoltaics program review. AIP Conf. Proc. 462, 511–516 (1999).

    CAS  Article  Google Scholar 

  7. Malikova, L. Composition and temperature dependence on the direct bandgap of GaAs1−x Nx (0≤x≤0.0232) using contactless electroreflectance. J. Electron Mater. 27, 484–487 (1998).

    CAS  Article  Google Scholar 

  8. Bhat, R. et al. Growth of GaNAs/GaAs and GaInNAs/GaAs quantum wells by low-pressure organometallic chemical vapor deposition. J. Cryst. Growth 195, 427–427 (1998).

    CAS  Article  Google Scholar 

  9. Skierbiszewski, C. et al. Large, nitrogen-induced increase of the electron effective mass in Inv Ga1−y Nx As1−x Appl. Phys. Lett. 76, 2409–2411 (2000).

    CAS  Article  Google Scholar 

  10. Yu, K.M. et al. Nitrogen-induced increase of the maximum electron concentration in group III–N–V alloys. Phys. Rev. B 61, R13337–R13340 (2000).

    CAS  Article  Google Scholar 

  11. Yu, K.M. et al. Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNx As1−x . Appl. Phys. Lett. 77, 2858–2860 (2000).

    CAS  Article  Google Scholar 

  12. Polimeni, A. et al. Effect of hydrogen on the electronic properties of Inx Ga1−x As1−y Ny/GaAs quantum wells. Phys. Rev. B 63, 201–304 (2001).

    Google Scholar 

  13. Polimeni, A. et al. Role of hydrogen in III–N–V compound semiconductors. Semicond. Sci. Technol. 17, 797–802 (2002).

    CAS  Article  Google Scholar 

  14. Hydrogen in semiconductors. Semiconductors and Semimetals Vol. 34 (eds Pankove, J.I. & Johnson, N.M.) (Academic, New York, 1991).

  15. Ogawa, M. Mechanism of high Si-doping into MBE-grown GaAs. Inst. Phys. Conf. Ser. 79, 103–108 (1985).

    Google Scholar 

  16. Walukiewicz, W. Amphoteric native defects in semiconductors. Appl. Phys. Lett. 54, 2094–2096 (1989).

    CAS  Article  Google Scholar 

  17. Walukiewicz, W. Intrinsic limitations to the doping of wide-gap semiconductors. Physica B 302–303, 123–134 (2001).

  18. Schubert, E.F., Stark, J.B., Chiu, T.H. & Bell, B. Diffusion of atomic silicon in gallium arsenide. Appl. Phys. Lett. 53, 293–295 (1988).

    CAS  Article  Google Scholar 

  19. Bosker, G., Stolwijk, N.A., Thordson, J., Sodervall, U. & Andersson, T.G. Diffusion of nitrogen from a buried doping layer in gallium arsenide revealing the prominent role of As interstitials. Phys. Rev. Lett. 81, 3443–3446 (1998).

    CAS  Article  Google Scholar 

  20. Walukiewicz, W. Application of the amphoteric native defect model to diffusion and activation of shallow impurities in III–V semiconductors. Mater. Res. Soc. Symp. Proc. 300, 421–432 (1993).

    CAS  Article  Google Scholar 

  21. Thinh, N.Q. et al. Signature of an intrinsic point defect in GaNx As1−x . Phys. Rev. B 63, 033203 (2001).

    Article  Google Scholar 

  22. Kurtz, S.R. et al. InGaAsN solar cells with 1.0eV bandgap, lattice matched to GaAs. Appl. Phys. Lett. 74, 729–731 (1999).

    CAS  Article  Google Scholar 

  23. Yu, K.M. et al. Enhanced nitrogen incorporation by pulsed laser annealing of GaNx As1−x formed by N ion implantation. Appl. Phys. Lett. 80, 3958–3960 (2002).

    CAS  Article  Google Scholar 

  24. Kaplar, R.J. et al. Deep levels and their impact on generation current in Sn-doped InGaAsN. J. Appl. Phys. 90, 3405–3408 (2001).

    CAS  Article  Google Scholar 

Download references

Acknowledgements

We thank M. R. Pillai and M. J. Aziz for their assistance in laser annealing, and J. Beeman for ion implantation. This work was supported by the Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the US Department of Energy under Contract No. DE-AC03-76SF00098. M.A.S. acknowledges support from a NSF Graduate Research Fellowship.

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Yu, K., Walukiewicz, W., Wu, J. et al. Mutual passivation of electrically active and isovalent impurities. Nature Mater 1, 185–189 (2002). https://doi.org/10.1038/nmat754

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